Electronic and optical devices integrating thin films of the spin crossover complex [Fe(HB(1,2,4-triazol-1-yl)3)2] / Yuteng Zhang  

Public ISBD Titre : Electronic and optical devices integrating thin films of the spin crossover complex [Fe(HB(1,2,4-triazol-1-yl)3)2] Type de document : texte imprimé Auteurs : Yuteng Zhang, Auteur ; Gabor Molnar, Directeur de thèse ; Azzedine Bousseksou, Directeur de thèse Langues : Anglais (eng) Tags : SPIN CROSSOVER  THIN FILMS  ELECTRONIC DEVICES  OPTICAL CAVITIES Résumé : "The central aim of this thesis is the exploration of potential applications of molecular spin crossover complexes in electronic and photonic devices. To this aim vacuum thermal deposited, high quality, crystalline thin films of the complex [Fe(HB(tz)3)2] (tz = (1,2,4-triazol-1-yl), displaying robust, above-room-temperature spin crossover, were incorporated into two- and three-terminal device configurations. Large-area, vertical junctions were formed by ITO/[Fe(HB(tz)3)2]/Al stacks. The junctions exhibited up to three orders of magnitude resistance drop when switching from the low-spin to the high-spin state. They revealed also high resistance to fatigue both on storage (> 1 year) and on repeated switching (>10,000) in ambient air. The resistance switching mechanism could be linked to the intrinsic charge transport in the spin crossover film. Similar multilayer junctions with magnetic electrodes were also fabricated for the first time. [Fe(HB(tz)3)2] films were then incorporated into organic field-effect transistors. Different device configurations were created (bottom gate/bottom contact, bottom gate/top contact) - aiming for the use of the spin crossover phenomenon to modulate the transfer/output characteristics of the transistors. Despite considerable difficulties in achieving reproducible temperature-dependent characterizations, we could evidence changes of the device characteristics, which may be related to the spin crossover phenomenon. In parallel, multilayer Ag/[Fe(HB(tz)3)2]/Ag Fabry-Perot cavities were also fabricated. These devices use the remarkable refractive index switching (?n = 0.04 - 0.2) between the low-spin and high-spin states in the [Fe(HB(tz)3)2] film to achieve modulation of the cavity resonance. This wavelength tuneability is coupled with low absorption losses in the visible and near infrared spectral ranges, providing scope for reconfigurable and self-adaptive photonics applications." Document : Thèse de Doctorat Etablissement_delivrance : Université Toulouse 3 Date_soutenance : 14/12/2021 Ecole_doctorale : Sciences de la Matière (SdM) (Toulouse) Domaine : Chimie Organométallique et de Coordination En ligne : https://theses.hal.science/tel-03693637 Electronic and optical devices integrating thin films of the spin crossover complex [Fe(HB(1,2,4-triazol-1-yl)3)2] [texte imprimé] / Yuteng Zhang, Auteur ; Gabor Molnar, Directeur de thèse ; Azzedine Bousseksou, Directeur de thèse . - [s.d.]. Langues : Anglais (eng) Tags : SPIN CROSSOVER  THIN FILMS  ELECTRONIC DEVICES  OPTICAL CAVITIES Résumé : "The central aim of this thesis is the exploration of potential applications of molecular spin crossover complexes in electronic and photonic devices. To this aim vacuum thermal deposited, high quality, crystalline thin films of the complex [Fe(HB(tz)3)2] (tz = (1,2,4-triazol-1-yl), displaying robust, above-room-temperature spin crossover, were incorporated into two- and three-terminal device configurations. Large-area, vertical junctions were formed by ITO/[Fe(HB(tz)3)2]/Al stacks. The junctions exhibited up to three orders of magnitude resistance drop when switching from the low-spin to the high-spin state. They revealed also high resistance to fatigue both on storage (> 1 year) and on repeated switching (>10,000) in ambient air. The resistance switching mechanism could be linked to the intrinsic charge transport in the spin crossover film. Similar multilayer junctions with magnetic electrodes were also fabricated for the first time. [Fe(HB(tz)3)2] films were then incorporated into organic field-effect transistors. Different device configurations were created (bottom gate/bottom contact, bottom gate/top contact) - aiming for the use of the spin crossover phenomenon to modulate the transfer/output characteristics of the transistors. Despite considerable difficulties in achieving reproducible temperature-dependent characterizations, we could evidence changes of the device characteristics, which may be related to the spin crossover phenomenon. In parallel, multilayer Ag/[Fe(HB(tz)3)2]/Ag Fabry-Perot cavities were also fabricated. These devices use the remarkable refractive index switching (?n = 0.04 - 0.2) between the low-spin and high-spin states in the [Fe(HB(tz)3)2] film to achieve modulation of the cavity resonance. This wavelength tuneability is coupled with low absorption losses in the visible and near infrared spectral ranges, providing scope for reconfigurable and self-adaptive photonics applications." Document : Thèse de Doctorat Etablissement_delivrance : Université Toulouse 3 Date_soutenance : 14/12/2021 Ecole_doctorale : Sciences de la Matière (SdM) (Toulouse) Domaine : Chimie Organométallique et de Coordination En ligne : https://theses.hal.science/tel-03693637

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